Heteroepitaxy of N-type β-Ga2O3 thin films on sapphire substrate by low pressure chemical vapor deposition

Homoepitaxial growth of β-Ga2O3 thin films by low pressure chemical vapor deposition

Effect of growth time on ZnO thin films prepared by low temperature chemical bath deposition on PS substrate

ZnO thin films were successfully synthesized on a porous silicon (PS) substrate by chemical bathdeposition method. X-ray diffraction (XRD), field-emission scanning electron microscopy (FESEM),and photoluminescence (PL) analyses were carried out to investigate the effect of growth duration(3, 4, 5, and 6 h) on the optical and structural properties of the aligned ZnO nanorods. T...

Thickness Dependence of Sensitivity in Thin Film Tin Oxide Gas Sensors Deposited by Vapor Pyrolysis

Transparent SnO2 thin films were deposited on porcelain substrates using a chemical vapor deposition technique based on the hydrolysis of SnCl4 at elevated temperatures. A reduced pressure self-contained evaporation chamber was designed for the process where the pyrolysis of SnCl4 at the presence of water vapor was carried out. Resistive gas sensors were fabricated by providing ohmic contacts o...

Optimized Conditions for Catalytic Chemical Vapor Deposition of Vertically Aligned Carbon Nanotubes

Here, we have synthesized vertically aligned carbon nanotubes (VA-CNTs), using chemical vapor deposition (CVD) method. Cobalt and ethanol are used as the catalyst and the carbon source, respectively. The effects of ethanol flow rate, thickness of Co catalyst film, and growth time on the properties of the carbon nanotube growth are investigated. The results show that the flow rate of ethanol and...

Transferable single-crystal GaN thin films grown on chemical vapor-deposited hexagonal BN sheets

Single-crystal gallium nitride (GaN) layers were directly grown on centimeter-scale hexagonal boron nitride (h-BN). Using chemical vapor deposition (CVD), centimeter-scale h-BN films were synthesized on a single-crystal Ni(111) and readily transferred onto amorphous fused silica supporting substrates that had no epitaxial relationship with GaN. For growing fully coalescent GaN layers on h-BN, t...